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Electronic Structure of Defects in Amorphous Silicon Nitride

Published online by Cambridge University Press:  22 February 2011

John Robertson
John Robertson*
Affiliation:
National Power Labs, Leatherhead, Surrey KT22 7SE, UK.
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Abstract

The paper reviews the electronic properties of defects in amorphous silicon nitride (a-Si3N4) and the hydrogenated alloys a-SiNx:H. The main defects in a-Si3N4 are the Si and N dangling bonds (DBs). The Si DB forms a sp3 state near midgap, while the N DB forms a highly localized pπ level just above the valence band edge. The behaviour of the alloys changes near x ≈ 1.1, the percolation threshold of Si-Si bonds. In the Si-rich alloys, both band edges are Si-like, only Si DBs are seen and their density is controlled by equilibration with weak Si-Si bonds. The x>1.1 alloys behave like silicon nitride; the valence band changes towards N pπ-like, both Si and N DBs can arise, the Si DB can have a high density and prefers to be in its charged diamagnetic configurations.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992, 65
Copyright
Copyright © Materials Research Society 1993

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References

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