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Element III Segregation During Mocvd Growth on Structured Substrates

Published online by Cambridge University Press:  28 February 2011

Eric P. Menu,
Kenneth M. Dzurko and
P. Daniel Dapkus
Eric P. Menu
Affiliation:
Department of Electrical Engineering and Center for Photonic Technology, University of Southern California, Los Angeles CA. 90089-0483
Kenneth M. Dzurko
Affiliation:
Department of Electrical Engineering and Center for Photonic Technology, University of Southern California, Los Angeles CA. 90089-0483
P. Daniel Dapkus
Affiliation:
Department of Electrical Engineering and Center for Photonic Technology, University of Southern California, Los Angeles CA. 90089-0483
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Abstract

The crystal habits of GaAs and GaAlAs grown on structured substrates by Metalorganic Chemical Vapor Deposition (MOCVD) have been investigated. The growth behavior was delineated by depositing alternating thin layers of AlGaAs and GaAs over grooves and mesas. A strong temperature dependence of facet growth rate and an anisotropy of Al composition with facet orientation are observed. This latter effect so far undocumented in MOCVD has been analysed by Auger Electron Spectroscopy performed on cleaved cross-sections. BCF theory has been used to extract quantitative microscopic data. These observations demonstrate the importance of surface effects and provide an insight into MOCVD growth mechanisms.

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