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Encapsulation of graphene interconnects with 2D Layered Insulator for improved performance

Published online by Cambridge University Press:  22 May 2014

Nikhil Jain and
Bin Yu
Nikhil Jain
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, 257 Fuller Road, Albany, NY 12203, U.S.A.
Bin Yu*
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, 257 Fuller Road, Albany, NY 12203, U.S.A.
*
*Email: NJain@albany.edu
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Abstract

The key material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (h-BN). A novel layer-based transfer technique is developed to construct the h-BN/MLG/h-BN heterostructures. The encapsulated graphene wires are characterized and compared with that on SiO2 or h-BN substrate without top passivating h-BN layer. Significant improvements in maximum current-carrying density, breakdown threshold, and maximum power density in encapsulated graphene wires are observed. These critical improvements are achieved without compromising the carrier transport characteristics in graphene. Furthermore, graphene wires exhibit electrical behavior much less insensitive to ambient conditions, as compared with the non-passivated ones. Overall, h-BN/graphene/h-BN heterostructure presents a robust material platform towards the implementation of high-performance carbon-based interconnects.

Keywords

passivationchemical vapor deposition (CVD) (deposition)nanostructure

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References

REFERENCES

Steinhogl, W, Schindler, G, Steinlesberger, G, Traving, M and Engelhardt, M 2005 Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller Journal of Applied Physics 97 023706–023706–7 CrossRefGoogle Scholar
Steinlesberger, G, Engelhardt, M, Schindler, G, Steinhögl, W, Von Glasow, A, Mosig, K and Bertagnolli, E 2002 Electrical assessment of copper damascene interconnects down to sub-50 nm feature sizes Microelectronic Engineering 64 409–16CrossRefGoogle Scholar
Davis, J A, Venkatesan, R, Kaloyeros, A, Beylansky, M, Souri, S J, Banerjee, K, Saraswat, K C, Rahman, A, Reif, R and Meindl, J D 2001 Interconnect limits on gigascale integration (GSI) in the 21st century Proceedings of the IEEE 89 305–24CrossRefGoogle Scholar
Wang, P-C and Filippi, R G 2001 Electromigration threshold in copper interconnects Applied Physics Letters 78 3598–600CrossRefGoogle Scholar
Geim, A K and Novoselov, K S 2007 The rise of graphene Nat Mater 6 183–91CrossRefGoogle ScholarPubMed
Chen, J-H, Jang, C, Xiao, S, Ishigami, M and Fuhrer, M S 2008 Intrinsic and extrinsic performance limits of graphene devices on SiO2 Nat Nano 3 206–9CrossRefGoogle ScholarPubMed
Dean, C R, Young, A F, Meric, I, Lee, C, Wang, L, Sorgenfrei, S, Watanabe, K, Taniguchi, T, Kim, P, Shepard, K L and Hone, J 2010 Boron nitride substrates for high-quality graphene electronics Nat Nano 5 722–6CrossRefGoogle ScholarPubMed
Jain, N, Bansal, T, Durcan, C and Yu, B 2012 Graphene-Based Interconnects on Hexagonal Boron Nitride Substrate IEEE Electron Device Letters 33 925–7CrossRefGoogle Scholar
Zhong, X, Amorim, R G, Scheicher, R H, Pandey, R and Karna, S P 2012 Electronic structure and quantum transport properties of trilayers formed from graphene and boron nitride Nanoscale 4 5490–8CrossRefGoogle ScholarPubMed
Mayorov, A S, Gorbachev, R V, Morozov, S V, Britnell, L, Jalil, R, Ponomarenko, L A, Blake, P, Novoselov, K S, Watanabe, K, Taniguchi, T and Geim, A K 2011 Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature Nano Lett. 11 2396–9CrossRefGoogle ScholarPubMed
Wang, H, Taychatanapat, T, Hsu, A, Watanabe, K, Taniguchi, T, Jarillo-Herrero, P and Palacios, T 2011 BN/Graphene/BN Transistors for RF Applications IEEE Electron Device Letters 32 1209–11CrossRefGoogle Scholar