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Environmental Effects on Cu/SiO2 and Cu/Ti/SiO2Thin Film Adhesion

Published online by Cambridge University Press:  10 February 2011

N. I. Tymiak,
M. Li,
A. A. Volinsky,
Y. Katz and
W. W. Gerberich
N. I. Tymiak
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
M. Li
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
A. A. Volinsky
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
Y. Katz
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
W. W. Gerberich
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
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Abstract

For several microelectronics applications, Cu/dielectric adhesion is a key reliability issue. Either electroplating or local galvanic coupling under moist operating conditions may result in hydrogen induced interface weakening. The present study compared hydrogen effects on Cu/SiO2 adhesion for sputter deposited f'dms with and without Ti underlayers. Thin Cu and Cu/Ti films ranging from 80–3000 nm have been evaluated. Direct observations of the surface during electrolytic charging have shown no evidence of film/substrate debonding for Cu/Ti systems. In contrast, extensive delaminations have been observed for Cu films. Indentation testing immediately after charging indicated up to 100% decrease in the practical adhesion for Ti/Cu films. The observed effect resulted from a true interfacialfracture energy reduction from 4 to 2 J/m2, Plastic energy dissipation was assumed unaffected as no yield stress changes were detected after charging. Even with the deleterious effect of hydrogen, adhesion strength of Cu/Ti films remained higher than that of non-charged Cu films.

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