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Epitaxial IV-VI Semiconductor Films

Published online by Cambridge University Press:  25 February 2011

T. K. Chu and
A. Martinez
T. K. Chu
Affiliation:
Naval Surface Weapons Center, 10901 New Hampshire Ave., Silver Spring, MD 20903-5000
A. Martinez
Affiliation:
Physics Department, The American University, Washington, DC 20016
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Abstract

Epitaxial films of IV-VI semiconductors and their alloys form the basis of an infrared detector technology that offers advantages in material stability as well as spectral versatility. These films are prepared by epitaxial hot-wall techniques and their material properties are essentially the same as those of bulk crystals. Because of their stability, multilayer growths of the materials can be achieved in a straight-forward manner. To date, multi-color detectors and small scale two-color detector arrays have been demonstrated successfully. A brief review of the growth method and the growth characteristics is given. Recent advances in superlattice research, especially those of interest to electro-optical devices, will be discussed. These include persistent photoconductivity and sub-bandgap optical transition.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986, 59
Copyright
Copyright © Materials Research Society 1987

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References

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