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Erbium-defect interactions in silica films implanted with MeV Er ions

Published online by Cambridge University Press:  28 February 2011

A. Polman,
D. C. Jacobson and
J. M. Poate
A. Polman
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USAFOM-Institute for Atomic and Molecular Physics, P.O. Box 41883 1098 SJ Amsterdam, The Netherlands
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA
J. M. Poate
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA
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Abstract

The effect of ion implantation damage on energy transfer processes in Er-doped silica films prepared by MeV ion implantation is studied, using measurements of the luminescence decay of Er3+(4ƒ11) at 1.535 μm. Silica films implanted with Er and annealed at 900°C show a luminescence lifetime of 14.1 ms. Subsequent irradiation with MeV C, Si, or Ge ions at fluences as low as 1011 ions/cm2 decreases the lifetime, which eventually saturates at 6.6–7.8 ms for fluences larger than 1014 ions/cm2. The fluence required to saturate and the lifetime at saturation depend on the ion used. These results are interpreted in terms of non-radiative energy transfer processes caused by irradiation-induced defects in the silica. The ion damage effects are mainly caused by the electronic component of the energy loss along the ion trajectories.

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