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Er-Doped Porous Silicon Led For Integrated Optoelectronics

Published online by Cambridge University Press:  10 February 2011

L. Tsybeskov,
G. F. Grom,
K. D. Hirschman,
H. A. Lopez,
S. Chan,
P. M. Fauchet and
V. P. Bondarenko
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY;
G. F. Grom
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY;
K. D. Hirschman
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY;
H. A. Lopez
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY;
S. Chan
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY;
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY;
V. P. Bondarenko
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
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Abstract

Porous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600–950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ∼1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-bandedgerecombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ∼1.5 μm was demonstrated.

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