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Evaluation of Indium Diffused M-i-n CdZnTe Detectors

Published online by Cambridge University Press:  10 February 2011

M-A. Gagliardi,
S. Nenonen,
T. Gagliardi,
L. Aleksejeva,
V. Ivanov and
M. Bavdaz
M-A. Gagliardi
Affiliation:
Metorex International Oy, Nihtisillankuja 5, FIN-02631 Espoo, Finland
S. Nenonen
Affiliation:
Metorex International Oy, Nihtisillankuja 5, FIN-02631 Espoo, Finland
T. Gagliardi
Affiliation:
Metorex International Oy, Nihtisillankuja 5, FIN-02631 Espoo, Finland
L. Aleksejeva
Affiliation:
Baltic Scientific Instruments, Ganibu Dambis 26, P.O. Box 33, Riga, LV-1005, Latvia
V. Ivanov
Affiliation:
Baltic Scientific Instruments, Ganibu Dambis 26, P.O. Box 33, Riga, LV-1005, Latvia
M. Bavdaz
Affiliation:
Space Science Department of the European Space Agency, P.O. Box 299, NL-2200AG Noordwiijk, The Netherlands
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Abstract

One of the main electronic noise sources of a room temperature spectroscopy system is the leakage current of a detector. It can be reduced with a pn-junction type detector structure such as a M-i-n configuration, and with cooling. In this work eight CdZnTe detectors with a M-i-n structure were fabricated by indium diffusion. The junction was characterized by a currentvoltage technique. Detector electrical, charge collection and spectroscopic properties were compared to the ones received with the traditional electroless Au contacts, before the junction formation. As a result of the indium diffusion an improved detector leakage current performance was achieved. However, a corresponding improvement in the detector energy resolution was not always observed due to the CdZnTe charge collection properties and process variables.

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References

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