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Evaluation of Lamp Zone-Melting Recrystallization

Published online by Cambridge University Press:  28 February 2011

P.W. Mertens,
D.J. Wouters,
K.J. Yallup and
H.E. Maes
P.W. Mertens
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
D.J. Wouters
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
K.J. Yallup
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
H.E. Maes
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
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Abstract

The intensity profiles of various kinds of topheaters are compared and discussed. Using the mercury-arc lamp heater experiments on polycrystalline silicon layers of thicknesses varying from 1 to 10 urn were performed. The 10 fiva layers were polished prior to recrystallization. After zone melting recrystallization they showed a strong (100) texture combined with an alignment of the [010] direction with the scan direction. By patterning 1 ¼m poly-silicon films into isolated narrow silicon stripes, the kinetic mechanism that is shown to be responsible for the alignment of the [010] direction along the scan direction could be inhibited. In this way other mechanisms that influence the orientation could be studied. Finally some electrical characteristics are presented.

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References

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