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Evaluation of Large Diameter InP Substrate Material

Published online by Cambridge University Press:  28 February 2011

K. D. C. Trapp,
M. T. Asom,
G. E. Carver,
E. M. Monberg,
F. A. Thiel and
R. L. Barns
K. D. C. Trapp
Affiliation:
AT&T Bell Laboratories, Route 222, Breinigsville, PA 18031
M. T. Asom
Affiliation:
AT&T Bell Laboratories, Route 222, Breinigsville, PA 18031
G. E. Carver
Affiliation:
AT&T Bell Laboratories, P. 0. Box 900, Princeton, NJ 08540
E. M. Monberg
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
F. A. Thiel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
R. L. Barns
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Expanding interest in large-scale fabrication of electronic and photonic devices and in the scale-up of epitoxial growth reactors is creating the need for high quality large diameter InP substrate material. This paper will discuss the evaluating of three-inch diameter semi-insulating Fe-doped InP substrate material purchased from two commercial suppliers. The results of Photon Back Scatter, Infrared Transmission Microscopy, Hall Effect, and Spatially Resolved Photoluminescence measurements will be presented and evaluated.

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References

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