Hostname: page-component-7b7567c8c-kwt9d Total loading time: 0 Render date: 2026-11-14T08:29:48.300Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence of InterDiffusion Effect In Stacked Polycrystalline Sige/Si Layers For Cmos Gate Application

Published online by Cambridge University Press:  10 February 2011

C. Hernandez,
Y. Campidelli,
I. Sagnes,
E. Henrisey,
F. Martin and
D. Bensahel
C. Hernandez
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
Y. Campidelli
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
I. Sagnes
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
E. Henrisey
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
F. Martin
Affiliation:
CEA-LETI, rue des Martyrs, 38054, Grenoble-Cedex 9, France
D. Bensahel
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
Get access

Abstract

Poly-SiGe stacked gates with Ge content ([Ge])varying between zero and 100% have been fabricated using an industriel single-wafer machine. These poly-SiGe layers were characterised and fully integrated in a 0.18 pm CMOS process. Interdiffusion of Si and Ge upon subsequent annealing of the structure has been observed and studied. This interdiffusion effect was found to be responsible for the discrepancy observed between theoretical and practical values of the Ge workfunction ɸms evaluated from our electrical measurements and from those of different authors. A technique for the limitation of this interdiffusion effect has then been developped and is described.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] King, T. J., Pfiester, J. R., Shott, J. D., McVittie, J. P., Saraswat, K. C., IEDM Techn. Digest, 253 (1990).Google Scholar
[2] Skotnicki, T., Bouillon, P., Gwoziecki, R., Halimaoui, A., Mourrain, C., Sagnes, I., Regolini, J. L., Joubert, O., Paoli, M., Schiavone, P., ESSDERC' 97, 216 (1997).Google Scholar
[3] Monget, C.,Vallon, S., Bell, F. H., Vallier, L., and Joubert, O., J. Electrochem. Soc. 144, 2455 (1997).Google Scholar
[4] Vallon, S., Monget, C., Joubert, O., Vallier, L., Bell, F. H., Pons, M., Regolini, J.-L., Morin, C., and Sagnes, I., J. Vac. Sci. Technol. A 15(4), 1874 (1997).Google Scholar
[5] Ozttirk, M. C., Grider, D. T., Wortman, J. J., Littlejohn, M. A., Zhong, Y., Batchelor, D. and Russell, P., Journal of Electronis Materials 19, 1129 ( 1990).Google Scholar
[6] Li, V. Z-Q., Mirabedini, M. R., Kuehn, R. T., Gladden, D., Batchelor, D., Christenson, K., Wortman, J. J., Ozturk, M. C., and Maher, D. M. in Polycrystalline Thin Films : Structure, Texture, Properties, and Applications II, edited by Frost, H. J., Parker, M. A., Ross, C. A., Holm, E. A., (Mater. Res. Soc. Proc., Pittsburgh, PA, 1996) pp.333–338.Google Scholar
[7] Bodnar, S., Morin, C., Regolini, J. L., Thin Solid Films, 294, 11 (1997).Google Scholar
[8] Lin, H. C., Chang, C. Y., Chen, W. H., Tsai, W. C., Chang, T. C., Jung, T. G., and Lin, H. Y., J.Electrochem. Soc. 141, 2559 (1994).Google Scholar
[9] Bensahel, D., Campidelli, Y., Hernandez, C., Martin, F., Sagnes, I., Meyer, D. J., Solid State Technology, 41(3), S5 (1998).Google Scholar
[10] Alieu, J., Gwoziecki, R., Paoli, M., Skotnicki, T., Hernandez, C., Martin, F., Mourrain, C., Bensahel, D., Basso, M.-T., Galvier, J. and Haond, M., VLSI Symp. Tech. Dig. (1997). (to be published).Google Scholar
[11] Ito, H., Sasaki, M., kimizuka, N., Uwasawa, K., Nakamura, N., Ito, T., Goto, Y., Tsuboi, A., Watanuki, S., Ueda, T., Horiuchi, T., IEDM Techn. Digest, 635 (1997).Google Scholar
[12] Halimaoui, A., Henrisey, E., Hernandez, C., Martins, J., Paoli, M., Regache, M., Vallier, L., Bensahel, D., Blanchard, B., Rouchon, D., Martin, F., presented at 1998 MRS Spring Meeting, San Francisco, CA (1998). (to be published).Google Scholar