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Experimental Characterization and Modeling of InP-based Microcoolers

Published online by Cambridge University Press:  01 February 2011

Rajeev Singh,
Daryoosh Vashaee,
Yan Zhang,
Million Negassi,
Ali Shakouri,
Yae Okuno,
Gehong Zeng,
Chris LaBounty and
John Bowers
Rajeev Singh
Affiliation:
Jack Baskin School of Engineering, University of California, Santa Cruz, CA, 95064
Daryoosh Vashaee
Affiliation:
Jack Baskin School of Engineering, University of California, Santa Cruz, CA, 95064
Yan Zhang
Affiliation:
Jack Baskin School of Engineering, University of California, Santa Cruz, CA, 95064
Million Negassi
Affiliation:
Jack Baskin School of Engineering, University of California, Santa Cruz, CA, 95064
Ali Shakouri
Affiliation:
Jack Baskin School of Engineering, University of California, Santa Cruz, CA, 95064
Yae Okuno
Affiliation:
Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106
Gehong Zeng
Affiliation:
Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106
Chris LaBounty
Affiliation:
Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106
John Bowers
Affiliation:
Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106
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Abstract

We present experimental and theoretical characterization of InP-based heterostructure integrated thermionic (HIT) coolers. In particular, the effect of doping on overall device performance is characterized. Several thin-film cooler devices have been fabricated and analyzed. The coolers consist of a 1μm thick superlattice structure composed of 25 periods of InGaAs well and InGaAsP (λgap ≈ 1.3μm) barrier layers 10 and 30nm thick, respectively. The superlattice is surrounded by highly-doped InGaAs layers that serve as the cathode and anode. All layers are lattice-matched to the n-type InP substrate. N-type doping of the well layers varies from 1.5×1018cm−3 to 8×1018cm−3 between devices, while the barrier layers are undoped. Device cooling performance was measured at room-temperature. Device current-versus-voltage relationships were measured from 45K to room-temperature. Detailed models of electron transport in superlattice structures were used to simulate device performance. Experimental results indicate that low-temperature electron transport is a strong function of well layer doping and that maximum cooling will decrease as this doping is increased. Theoretical models of both I-V curves and maximum cooling agree well with experimental results. The findings indicate that low-temperature electron transport is useful to characterize potential barriers and energy filtering in HIT coolers.

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References

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