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External Cavity Mid-Infrared Semiconductor Lasers

Published online by Cambridge University Press:  10 February 2011

H. Q. Le,
C.-H. Lin,
S. J. Murry,
J. Zheng and
S.-S. Pei
H. Q. Le
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy Center University of Houston Houston, TX 77204-4793, USA
C.-H. Lin
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy Center University of Houston Houston, TX 77204-4793, USA
S. J. Murry
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy Center University of Houston Houston, TX 77204-4793, USA
J. Zheng
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy Center University of Houston Houston, TX 77204-4793, USA
S.-S. Pei
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy Center University of Houston Houston, TX 77204-4793, USA
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Abstract

Sb mid-IR laser can be used in external configuration to achieve wide wavelength tuning range. At low temperature, gain media with band-edge wavelengths between 3.3 to 4 pm have been demonstrated with wavelength tuning up to ∼9% of the center wavelength. Power output from few tens of mW to 0.2-W peak, 20-mW average was achieved. Type-II Sb laser promises the possibility of such performance at higher temperature, e. g. 200 K. However, significant trade-off must be considered between tuning range and power and efficiency. Optimization requires consideration of both basic wafer design and cavity geometry.

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References

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