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Fabrication of Quantum Wires by Wet Etching Techniques

Published online by Cambridge University Press:  22 February 2011

H. W. Yang ,
S. F. Horng  and
H. L. Hwang
H. W. Yang
Affiliation:
Department Of Electrical Engineering, National Tsing Hua University Hsin-Chu, Taiwan 30043, R.O.C.
S. F. Horng
Affiliation:
Department Of Electrical Engineering, National Tsing Hua University Hsin-Chu, Taiwan 30043, R.O.C.
H. L. Hwang
Affiliation:
Department Of Electrical Engineering, National Tsing Hua University Hsin-Chu, Taiwan 30043, R.O.C.
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Abstract

Quantum Wires Structures Were Fabricated By Patterning Quantum Well Samples With Electron Beam Lithography And Various Wet Chemical Etching Procedures. Wire Structures With 800Å Wire Width Were Achieved By Wet Etching In Nh4Oh / H2O2 / H2O (20:7:973). These Samples Were Characterized By Scanning Electron Microscopy (Sem), Photoluminescence (Pl), And Polarization-Dependent Photoluminescence Excitation (Ple) Measurements. The Pl Spectra Show Significantly Strongpr Peaks Than That Taken From An En-Etched Quantum Well Sample. A Wire Width Of 400Å Was Estimated From The Blue Shift Of Pl Peaks. A 22% Anisotropy Was Observed From Polarization-Dependent Ple Spectra, Further Corroborating The Existence Of Two-Dimensional Quantum Confinement.

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