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Ferroelectric Field Effect Device

Published online by Cambridge University Press:  11 February 2011

A. G. Schrott,
J. A. Misewich,
R. Ramesh and
V. Nagarajan
A. G. Schrott
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
J. A. Misewich
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
R. Ramesh
Affiliation:
Materials Research Science and Engineering. Center, University of Maryland, College Park, MD 20742
V. Nagarajan
Affiliation:
Materials Research Science and Engineering. Center, University of Maryland, College Park, MD 20742
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Abstract

A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.

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