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Ferroelectric Film Self-Polarization

Published online by Cambridge University Press:  15 February 2011

E. Sviridov,
I. Sem,
V. Alyoshih,
S. Biryukov and
V. Dudkevich
E. Sviridov
Affiliation:
Institute of Physics, Rostov State University, 194 StachKi ave., Rostov-on-Don, 344104 Russia
I. Sem
Affiliation:
Institute of Physics, Rostov State University, 194 StachKi ave., Rostov-on-Don, 344104 Russia
V. Alyoshih
Affiliation:
Institute of Physics, Rostov State University, 194 StachKi ave., Rostov-on-Don, 344104 Russia
S. Biryukov
Affiliation:
Institute of Physics, Rostov State University, 194 StachKi ave., Rostov-on-Don, 344104 Russia
V. Dudkevich
Affiliation:
Institute of Physics, Rostov State University, 194 StachKi ave., Rostov-on-Don, 344104 Russia
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Abstract

In the present paper three mechanisms of self-polarization of ferroelectric crystals are discussed: polarization by the crystal bending, that by the “organized” Phase transition and that by the internal field. It is shown that these mechanisms operate also in the case of films. However, the using of cathode sputtering leads to the appearance of two new mechanisms: polarization by the field biasing the substrate with respect to the gas discharge at the film deposition temperature Ts below the Curie point temperature Tc (Ts < TO; and polarization by the field captured by the traps of the negative charge having no time to relax for the time of cooling the film to Tc (Ts > Tc).

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994, 141
Copyright
Copyright © Materials Research Society 1995

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References

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