Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T00:53:35.885Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferroelectric Films-Growth, Properties and Applications

Published online by Cambridge University Press:  16 February 2011

M.H. Francombe and
S.V. Krisknaswamy
M.H. Francombe
Affiliation:
Westinghouse Science and Technology Center, Pittsburgh, PA 15235
S.V. Krisknaswamy
Affiliation:
Westinghouse Science and Technology Center, Pittsburgh, PA 15235
Get access

Abstract

Thin films of ferroelectric and piezoelectric materials are playing a growing role as critical elements in microwave acoustic devices, infrared imagers, integrated optic circuits, optical displays and high-performance semiconductor memories. In this review, we discuss recent progress in the control of growth, structure and properties of the main candidate materials, such as piezoelectric ZnO and AlN, and ferroelectric PZT-based solid solutions, KNbO3, bismuth titanate (Bi4Ti3O12), LiNbO3, LiTaO3 and KNO3. Brief mention is also made of the role and status ferroelectric polymers and of the BaMF4 class of fluorides. The emphasis of the review is primarily on vacuum-processed films, and optimization of characteristics required for integration into solid-state or semiconductor components.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990, 179
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Francombe, M. H. and Krishnaswamy, S. V., Proc. 36th. Natl. Symp. of AVS, J. Vac. Sci. Technol. (1990), in press.Google Scholar
2. Francombe, M. H., Ferroelectrics 3, 199 (1972); Thin Solid Films 13, 413 (1972).Google Scholar
3. Kingon, A. I., 0. Auciello, H., Ameen, M. S., Soble, C. N., Graettinger, T. M., Rou, S. H. and Krauss, A. R., Proc. Symp. Ceram. Thick and Thin Films ( Indianapolis, April 1989).Google Scholar
4. Krupanidhi, S. B., 2nd Symp. on Integ. Ferroelectrics, Monterey, CA ( March 1990)Google Scholar
5. lijima, K., Terashima, T., Yamamoto, K., Hirata, K. and Bando, Y., Appl. Phys. Lett. 56, 527 (1990)Google Scholar
6. Sinharoy, S., Buhay, H., Burke, M. G., Lampe, D. R. and Pollak, T. M., Spec. Ferroelectrics Issue, IEEE Trans. Ultrasonics, Ferroelectrics and Frq. Control (1990)Google Scholar
7. Krishnaswamy, S. V., McAvoy, B. R. and Moore, R. A., Proc. IEEE Ultrasonics Symp., P.531 (1983)Google Scholar
8. Krishnaswamy, S. V., Driscoll, M. M., Moore, R. A., Hester, W. A. and Szedon, J. R., GOMAC Digest, (1984), p. 478.Google Scholar
9. Salvo, H. L., Sundelin, R. N., McAvoy, B. R. and Lieberman, S., Proc. IEEE Ultrasonics Symp., 493 (1981).Google Scholar
10. Driscoll, M. M., Moore, R. A., Rosenbaum, J., Krishnaswamy, S. V. and Szedon, J. R., Proc. IEEE Ultrasonics Symp., 365 (1986).Google Scholar
11. Burns, S. G. and Ketcham, R. S., IEEE MTT-S Symp. Digest 83 (1984).Google Scholar
12. Sreenivas, K. and Sayer, M., J. Appl. Phys. 64, 1484 (1988).Google Scholar
13. Takayama, R. and Tomita, Y., J. Appl. Phys. 65, 1666 (1989)Google Scholar
14. Adachi, M., Matsuzaki, T., Yamada, T., Shiosaki, T. and Kawabata, A., Jpn. J. Appl. Phys. 26, 550 (1987)Google Scholar
15. Matsubara, S., Miura, S., Miyasaka, Y., and Shohata, N., J. Appl. Phys. 66, 5827 (1989)Google Scholar
16. Scott, J. F., Kammerdiner, L., Parris, M., Traynor, S., Ottenbacher, V., Shawabkeh, A. and Oliver, W. F., J. Appl. Phys. 64, 787 (1988).Google Scholar
17. J. Hulliger. Gutmann, R., and Wagli, P., Thin Solid Films 175, 201 (1989)Google Scholar
18. Kanata, T., Kobayashi, Y. and Kubota, K., J. Appl. Phys. 62, 2989 (1987)Google Scholar
19. Kingon, A. I., Rou, S. H., Ameen, M. S.,Graettinger, T. M., Gifford, K., Auciello, O. and Krauss, A. R., Ceram. Soc. Mtg., Anaheim ( Oct.1989).Google Scholar
20. Wu, S. Y., Takei, W. J., Francombe, M. H. and Cummins, S. E., Ferroelectrics 3, 217 (1972).Google Scholar
21. Wu, S. Y., Takei, W. J. and Francombe, M. H., Ferroelectrics 10, 209 (1976).Google Scholar
22. Wu, S. Y., IEEE Trans. Electron. Devices ED–21, 499 (1974).Google Scholar
23. Sugibuchi, K., Kurogi, Y. and Endo, N., J. Appl. Phys. 46, 2877 (1975).Google Scholar
24. McFee, J. H., Bergman, J. G. and Crane, G. R., Ferroelectrics 3, 305 (1972).Google Scholar
25. Yamada, T. and Kitayama, T., J. Appl. Phys. 52, 6859 (1981).Google Scholar
26. Yamauchi, N., Jpn. J. Appl. Phys. 25, 590 (1986)Google Scholar
27. DiDomenico, M. Jr., Eibschutz, M., Guggenheim, H. J. and Camlibel, T., Solid State Comm. 7, 1119 (1969).Google Scholar
28. Keve, E. T., Abrahams, S. C. and Bernstein, J. L., J. Chem. Phys. 51, 4928 (1969).Google Scholar