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Ferromagnetic Single-Electron Transistor with RC Gate

Published online by Cambridge University Press:  10 February 2011

Jun-ichi Shirakashi and
Yasushi Takemura
Jun-ichi Shirakashi
Affiliation:
Akita Prefectural University, 84–4 Ebinokuchi, Tsuchiya, Honjo, Akita 015–0055, JAPAN.
Yasushi Takemura
Affiliation:
Yokohama National University, 79–5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240–8501, JAPAN.
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Abstract

Ferromagnetic single-electron transistors coupled to the controlling gate potential by the gate resistance and gate capacitance in series are studied quantitatively. In this type of the device, several metastable charge states are possible within the Coulomb blockade range. The enhancement and hysteresis of tunnel magnetoresistance on drain and gate voltages are predicted. Inelastic macroscopic quantum tunneling of charge and existence of several charge states play an important role for the unique behavior of the tunnel magnetoresistance. This implies that RC-coupled ferromagnetic single-electron transistors have a new functionality as novel magnetoresistive nanostructure devices.

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References

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