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Field Emission Structure with Shottky-Barrier Electrode

Published online by Cambridge University Press:  14 March 2011

Andrey P. Genelev,
Alexey A. Levitsky and
Vladimir S. Zasemkov
Andrey P. Genelev
Affiliation:
Krasnoyarsk State Technical Univ., Vacuum Microelectronics Lab., Krasnoyarsk, RUSSIA
Alexey A. Levitsky
Affiliation:
Krasnoyarsk State Technical Univ., Dept. of Radioelectronics, Krasnoyarsk, RUSSIA
Vladimir S. Zasemkov
Affiliation:
Krasnoyarsk State Technical Univ., Vacuum Microelectronics Lab., Krasnoyarsk, RUSSIA
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Abstract

We analyze a non-traditional version of semiconductor field emission structure, based on silicon cones arrays and destined for application in low-voltage vacuum microelectronics devices. In proposed construction, the gate electrode is used as Shottky-barrier contact on silicon tips. Due to Shottkybarrier contact we have obtained depletion layer in tip body under the gate electrode. Therefore variation of the gate electric potential provides the emitter current modulation. Experimental structures were fabricated with about 28000 silicon cones per 1 mm2 by reactive ion etching through a silica mask. Using a quasi two-dimensional model, we have computed these emitter structures. The model takes into account non-uniformity of silicon cone cross-section. Here, we study the influence of emitter tips parameters on the structure performance. Initial results prove the possibility of cathode current electric control with the gate electrode potential. Additionally we have obtained some other electric parameters of the emitter with the Shottky-barrier contact. The results of numerical analysis and experimental study provide a guide for design of proposed field emitter structure.

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References

REFERENCES

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