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Fluctuating Defect Density Probed with Noise Spectroscopy in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

P.A.W.E. Verleg,
O. Uca and
J. I. Dijkhuis
P.A.W.E. Verleg
Affiliation:
Debye Institute, Department of Condensed Matter, University of Utrecht, P.O. Box 80000, 3508 TA Utrecht, The Netherlands, verleg@fys.ruu.nl
O. Uca
Affiliation:
Debye Institute, Department of Condensed Matter, University of Utrecht, P.O. Box 80000, 3508 TA Utrecht, The Netherlands, verleg@fys.ruu.nl
J. I. Dijkhuis
Affiliation:
Debye Institute, Department of Condensed Matter, University of Utrecht, P.O. Box 80000, 3508 TA Utrecht, The Netherlands, verleg@fys.ruu.nl
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Abstract

Resistance fluctuations have been studied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K. The primary noise source has a power spectrum of approximately 1/f and is ascribed to hydrogen motion. Hopping of weakly bound hydrogen is thermally activated at such low temperatures with an average activation energy of 0.85 eV. The attempt rate amounts to 7 · 1012 s−1.

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