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Formation of Si-On-Insulator Structure Under Solid PhaseGrowth

Published online by Cambridge University Press:  25 February 2011

M. Miyao,
M. Moniwa,
T. Warabisako,
H. Sunami and
T. Tokuyama
M. Miyao
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Moniwa
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Warabisako
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
H. Sunami
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Tokuyama
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Two possible solutions to the problem of nucleus growth encountered inlateral solid-phase epitaxial growth over insulating films are discussed. Astress field originating from the thermal expansion coefficient for Si and SiO2 acts as the driving force behind preferential nucleation.Utilization of underlying Si3N4 films successfullyeliminated nucleii growth at topographically irregular portions. Inaddition, single crystallization of poly-Si nucleii was achieved on SOIstructures for the first time. Lateral growth speed (v [cm/s]) of 1.6 × 10exp(−3.9/kT[eV]) was obtained during high-temperature annealing (≥1000 C).

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References

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