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Freezing in Silicon at Large Undercooling

Published online by Cambridge University Press:  25 February 2011

P.A. Stolk,
A. Polman and
W.C. Sinke
P.A. Stolk
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
A. Polman
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
W.C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
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Abstract

Pulsed laser irradiation is used to induce epitaxial explosive crystallization of amorphous silicon layers buried in a (100) oriented crystalline matrix. This process is mediated by a self-propagating liquid layer. Time-resolved determination of the crystallization speed combined with numerical calculation of the interface temperature shows that freezing in silicon saturates at 16 m/s for large undercooling (> 130 K). A comparison between data and different models for melting and freezing indicates that the crystallization behavior at large undercooling can be described correctly if the rate-limiting factor is assumed to be diffusion in liquid Si at the solid/liquid interface.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989, 363
Copyright
Copyright © Materials Research Society 1990

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References

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