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GaAs Circuit Restructuring by Multi-Level Laser-Direct-Written Tungsten Process

Published online by Cambridge University Press:  28 February 2011

Jerry G. Black,
Scott P. Doran,
Mordechai Rothschild,
Jan H.C. Sedlacek and
Daniel J. Ehrlich
Jerry G. Black
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Scott P. Doran
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Mordechai Rothschild
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Jan H.C. Sedlacek
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Daniel J. Ehrlich
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
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Abstract

Laser-direct-writing processes are employed to fabricate a GaAs digital integrated circuit. The lithography-free techniques deposit and etch conductors and resistors, and remove insulating layers, thus enabling multilevel interconnections. These combined directwrite processes provide the flexibility of clip-lead prototyping on a micrometer scale.

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References

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