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GaAs Pixel Detectors

Published online by Cambridge University Press:  12 November 2013

A. Tyazhev ,
D. Budnitsky ,
D. Mokeev ,
V. Novikov ,
A. Zarubin ,
O. Tolbanov ,
G. Shelkov ,
E. Hamann ,
A Fauler  and
M. Fiederle
...Show all authors
A. Tyazhev
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
D. Budnitsky
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
D. Mokeev
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
V. Novikov
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
A. Zarubin
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
O. Tolbanov
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
G. Shelkov
Affiliation:
Joint Institute for Nuclear Research, 141980, Dubna, Russia.
E. Hamann
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany. IPS, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany.
A Fauler
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany.
M. Fiederle
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany. IPS, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany.
S. Procz
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany.
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Abstract

Results of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium charge carrier lifetime – hundreds of nanoseconds. Prototypes of microstrip and array HR GaAs sensors have been manufactured and tested. It is demonstrated that the sensors provide spatial resolution according to the pixel pitch and allow obtaining high quality X-ray images.

Keywords

x-ray tomographysensorx-ray diffraction (XRD)

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1576: Symposium WW – Nuclear Radiation Detection Materials , 2013 , mrss13-1576-ww08-01
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Ayzenshtat, G. I.; Budnitsky, D. L.; Koretskaya, O. B.; Novikov, V. A.; Okaevich, L. S.; Potapov, A. I.; Tolbanov, O. P.; Tyazhev, A. V.; Vorobiev, A. P., GaAs resistor structures for X-ray imaging detectors //Nuclear Instruments & Methods in Physics Research. 2002. V. A487. P96–10;CrossRefGoogle Scholar
Tyazhev, A. V.; Budnitsky, D. L.; Koretskay, O. B.; Novikov, V. A.; Okaevich, L. S.; Potapov, A. I.; Tolbanov, O. P.; Vorobiev, A. P., GaAs radiation imaging detectors with an active layer thickness up to 1 mm.//Nuclear Instruments & Methods in Physics Research. 2003. V. A 509. P34–39;Google Scholar
Tlustos, Lukas, Shelkov, Georgy, .Tolbanov, OlegP, “Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector),” Nuclear Instruments and Methods in Physics Research. 2011. V A633. P103–107;CrossRefGoogle Scholar
Novikov, Vladimir A., Koretskaya, Olga B., Mokeev, Dmitry Y., Tolbanov, Oleg P., Ryabkov, Sergey A., Tyazhev, Anton V., and Ayzenshtat, Gennady I., GaAs radiation imaging detectors for nondestructive testing, medical, and biological applications// Hard X-Ray and Gamma- Ray Detector Physics VII. Proceeding of SPIE, Vol. 5922, 59220Q-1. 1–3August 2005, San Diego, California, USA.Google Scholar
Ayzenshtat, G.I. et al. . GaAs structures for X-ray imaging detectors// Nuclear Instruments and Methods in Physics Research. 2001. V A466. P.25–32.Google Scholar
Budnitsky, D.L., Tolbanov, O.P., Tyazhev, A.V., Electric Field Distribution in Chromium Compensated GaAs//International Conference on Semiconducting & Insulating Materials, 12th, Smolenice Castle, Slovakia, June 30-July 5, 2002, 23–26, Institute of Electrical and Electronics Engineers Google Scholar
Zarubin, Andrei N., Mokeev, Dmitry Y.,, Okaevich, Lyudmila S., Tyazhev, Anton V.,, Bimatov, Mikhail V., Lelekov, Mikhail A., Ponomarev, Ivan V., Non-equilibrium Charge Carriers Life Times in Semi-Insulating GaAs, Compensated with Chromium// International Siberian Workshop and Tutorials on Electron Devices and Materials (Erlagol, Altay-July 1-5, 2006), (IEEE Catalog N 06EX 1337, ISSN 5-7782-0646-1, ISSN 1815-3712) Google Scholar
Budnitskii, D. L., Koretskaya, O. B., Tolbanov, O. P., Tyazhev, A. V. PHOTOELECTRICAL CHARACTERISTICS OF AS-GROWN HIGH-RESISTANCE GaAs SINGLE CRYSTALS, Russian Physics Journal, Vol. 53, No. 1, 2010 CrossRefGoogle Scholar
Hamann, E, et al. , “Characterization of photon counting pixel detectors based on semiinsulating GaAs sensor material“, 2013 J. Phys. Conf. Ser. 425 062015, doi:10.1088/1742-6596/425/6/062015 CrossRefGoogle Scholar