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GaAs(100) Surface Modifications at Elevated Temperatures, Studied By In-Situ Spectroscopic Ellipsometry

Published online by Cambridge University Press:  25 February 2011

Huade Yao,
Paul G Snyder and
John A Woollam
Huade Yao
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588–0511
Paul G Snyder
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588–0511
John A Woollam
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588–0511
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Abstract

Spectroscopic ellipsometric (SE) measurements of GaAs (100) were carried out in an ultrahigh vacuum (UHV) chamber, without arsenic overpressure, at temperatures ranging from room temperature (RT) to ∼610°C. Surface changes induced at elevated temperatures were monitored by in-situ spectroscopic ellipsometry. The SE data clearly displayed in real time the process of desorption of the GaAs-surface-oxide overlayer at ∼580°C. In addition, changes in the near-surface region were observed before and after the oxide desorption. The near-subsurface region (top 50–100 Å) became less optically dense after being heated to 540°C or higher. For comparison, a pre-arsenic-capped molecular-beam-epitaxy (MBE)-grown GaAs surface was also studied. After the arsenic cap was evaporated off at ∼350°C, this surface remained smooth and clean as it was heated to higher temperatures.

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References

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