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GaN quantum dots as charge storage elements for memory devices

Published online by Cambridge University Press:  07 June 2012

P. Dimitrakis,
P. Normand,
C. Bonafos,
E. Papadomanolaki and
E. Iliopoulos
P. Dimitrakis
Affiliation:
IMEL – NCSR “Demokritos”, P.O.Box 60228, 153 10 Ag. Paraskevi, Greece
P. Normand
Affiliation:
IMEL – NCSR “Demokritos”, P.O.Box 60228, 153 10 Ag. Paraskevi, Greece
C. Bonafos
Affiliation:
CEMES – CNRS, 29 Rue Jeanne Marvig, BP 94347, 31055 Toulouse cedex 4, France
E. Papadomanolaki
Affiliation:
Physics Department, University of Crete, P.O.Box 2208, 71003 Heraklion, Greece
E. Iliopoulos
Affiliation:
Physics Department, University of Crete, P.O.Box 2208, 71003 Heraklion, GreeceMicroelectronics Research Group, IESL-FORTH, P.O.Box 1527, 71110 Heraklion, Greece
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Abstract

We investigated the fabrication and the memory characteristics of metal-oxide-semiconductor (MOS) capacitors with GaN quantum-dots (QDs) embedded in the gate insulator. The GaN-QDs, which act as discrete charge storage nodes, were deposited by radio-frequency molecular-beam-deposition (RF-MBD). The influence of the deposition dose on the QDs size and density was investigated by TEM studies. Subsequent electrical characterization measurements on memory capacitors revealed enhanced electron charge trapping leading to significant memory windows. Charge retention measurements at room temperature showed that the sample with the lowest concentration of QDs exhibits a significant programming window after ten-years.

Keywords

transmission electron microscopy (TEM)molecular beam epitaxy (MBE)nanostructure

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References

REFERENCES

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