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GaN Three Dimensional Nanostructures

Published online by Cambridge University Press:  21 February 2011

V. Dmitriev,
K. Irvine,
A. Zubrilov,
D. Tsvetkov,
V. Nikolaev,
M. Jakobson,
D. Nelson and
A. Sitnikova
V. Dmitriev
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713 USA
K. Irvine
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713 USA
A. Zubrilov
Affiliation:
Cree Research EED, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia
D. Tsvetkov
Affiliation:
Cree Research EED, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia
V. Nikolaev
Affiliation:
Cree Research EED, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia
M. Jakobson
Affiliation:
A.F. Ioffe Institute, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia
D. Nelson
Affiliation:
A.F. Ioffe Institute, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia
A. Sitnikova
Affiliation:
A.F. Ioffe Institute, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia
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Abstract

We report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from ∼20 nm to more than 2 μm. The average dot density ranged from 107 to 109 cm−2. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

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References

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