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Gate Oxynitride Grown in N2O and Annealed in NO Using Rapid Thermal Processing

Published online by Cambridge University Press:  15 February 2011

S. C. Sun,
C. H. Chen,
J. C. Lou,
L. W. Yen and
C. J. Lin
S. C. Sun
Affiliation:
Silicon ULSI Nanotechnology Group, Department of Electronics Engineering and Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
C. H. Chen
Affiliation:
Silicon ULSI Nanotechnology Group, Department of Electronics Engineering and Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
J. C. Lou
Affiliation:
Silicon ULSI Nanotechnology Group, Department of Electronics Engineering and Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
L. W. Yen
Affiliation:
Macronix International Co., Hsinchu, Taiwan, R.O.C.
C. J. Lin
Affiliation:
Macronix International Co., Hsinchu, Taiwan, R.O.C.
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Abstract

In this paper a new technique for the formation of high quality ultrathin gate dielectrics is proposed. Gate oxynitride was first grown in N2O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a tighter nitrogen distribution and a higher nitrogen accumulation at or near the Si-SiO2 interface than either N2O oxynitride or nitridation of SiO2 in the NO ambient. It is applicable to a wide range of oxide thickness because the initial rapid thermal N2O oxidation rate is slow but not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and significant resistance to interface state generation under electrical stress

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995, 241
Copyright
Copyright © Materials Research Society 1995

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