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Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing

Published online by Cambridge University Press:  22 February 2011

K. Masri,
J. P. Boyeaux,
S. N. Kumar,
L. Mayet and
A. Laugier
K. Masri
Affiliation:
Laboratoire de Physique de la Matière (U.A.- CNRS N° 358), INSA de Lyon; 20, Av. A. Einstein, 69621 Villeurbanne Cedex
J. P. Boyeaux
Affiliation:
Laboratoire de Physique de la Matière (U.A.- CNRS N° 358), INSA de Lyon; 20, Av. A. Einstein, 69621 Villeurbanne Cedex
S. N. Kumar
Affiliation:
Laboratoire de Physique de la Matière (U.A.- CNRS N° 358), INSA de Lyon; 20, Av. A. Einstein, 69621 Villeurbanne Cedex
L. Mayet
Affiliation:
Laboratoire de Physique de la Matière (U.A.- CNRS N° 358), INSA de Lyon; 20, Av. A. Einstein, 69621 Villeurbanne Cedex
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière (U.A.- CNRS N° 358), INSA de Lyon; 20, Av. A. Einstein, 69621 Villeurbanne Cedex
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Abstract

A high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987, 89
Copyright
Copyright © Materials Research Society 1988

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References

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