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Grain Structure and Electromigration Testing of Deep Sub- Micrometer Cu Interconnects

Published online by Cambridge University Press:  15 February 2011

Richard Frankovic and
Gary H. Bernstein
Richard Frankovic
Affiliation:
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556
Gary H. Bernstein
Affiliation:
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556
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Abstract

Copper interconnect test stripes were fabricated by electron-beam lithography, evaporation and lift-off to linewidths as small as 140 nm. Grain structure in the as-deposited films exhibited smaller standard deviation than long-term annealed films. Grain growth during the anneal step increased maximum grain size by 2.5 times. Electromigration lifetime testing indicated these interconnects have 2-4 orders-of-magnitude greater normal-use lifetimes than large cross-sectional area, large-grain Al-alloy interconnects.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995, 403
Copyright
Copyright © Materials Research Society 1995

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