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Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

Published online by Cambridge University Press:  25 February 2011

D.W. Greve,
R. Misra,
M.A. Capano and
T.E. Schlesinger
D.W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
R. Misra
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
M.A. Capano
Affiliation:
Wright- Patterson AFB, Dayton, OH 45433
T.E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

We report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992, 365
Copyright
Copyright © Materials Research Society 1992

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References

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