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Growth of Gaas on Si Using Algap Intermediate Layer

Published online by Cambridge University Press:  25 February 2011

N. Noto,
S. Nozaki,
T. Egawa,
T. Soga,
T. Jimbo and
K. Umeno
N. Noto
Affiliation:
Shin-Etsu Handotai Co. Ltd., Annaka, Gunma 379-01, Japan
S. Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA 95052, USA
T. Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
K. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

We have studied heteroepitaxial growth of GaAs on Si using an AlxGa1−xP intermediate layer in an atmospheric-pressure metal organic chemical vapor deposition (NOCVD) reactor. The crystallinity of the GaAs layer depends on AlP composition(x) of the intermediate layer. The bett crystal quality of GaAs layer is obtained when the AlP composition(x) of the intermediate layer is close to 0.5. The X-ray FWHX of 180 arcs and the etch pit density (EPD) of 2.5 × 107cm−2 were obtained in this GaAs/AlGaP/Si structure.

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References

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