Hostname: page-component-7b7567c8c-jswmv Total loading time: 0 Render date: 2026-11-15T23:11:03.654Z Has data issue: false hasContentIssue false
  • English
  • Français

H States, Impurity Passivation and Gettering Studies in H-Implanted Si Crystals

Published online by Cambridge University Press:  26 February 2011

Bulat N. Mukashev and
Serikbol Zh. Tokmoldin
Bulat N. Mukashev
Affiliation:
Physical Technical Institute, Kazakh Academy of Sciences, 480082. Alma-Ata, Republic of Kazakhstan
Serikbol Zh. Tokmoldin
Affiliation:
Physical Technical Institute, Kazakh Academy of Sciences, 480082. Alma-Ata, Republic of Kazakhstan
Get access

Abstract

IR and DLTS studies of H-implanted Si crystals are performed. It is shown that H is a bistable impurity: it has an equilibrium site at a T-site for H+ and H- and at a BC-site for H°. The mechanisms of H-passivation of defects and shallow and deep impurities are discussed.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Hydrogen in Semiconductors: Bulk and Surface Properties, ed. by Stutzmann, M. and Chevallier, J. (Elsevier Science Publishers, North-Holland, 1991) 581 p.Google Scholar
2. Van de Walle, C. G., Denteneer, P. J. H., Bar-Yam, Y. and Pantelides, S. T., Phys. Rev. B. 39, 10791 (1989).CrossRefGoogle Scholar
3. Gorelkinskii, Yu. V. and Nevinnyi, N. N., Pis'ma v JTF. 13, 105 (1987) [Sov. Tech. Phys. Lett., 13, 45 (1987)].Google Scholar
4. Kiefl, R. F., Celio, M., Estle, T. L., Kreitzman, S. R., Luke, G. M., Rizeman, T. M. and Ansaldo, E. A., Phys. Rev. Lett.,60, 224 (1988).Google Scholar
5. Nielsen, B. B.. Phys. Rev. B. 37, 6353 (1988).Google Scholar
6. Tavendale, A. J., Alexiev, O. and Williams, A. A., Appl. Phys. Lett., 47, 316 (1985); 56, 949 (1990).CrossRefGoogle Scholar
7. Johnson, N. N. and Herrinq, C. in Shallow Impurities in Semiconductors, ed. by Monemar, B. (Inst. Phys. Conf. Ser. N 95, Bristol and Philadelphia, 1989) pp. 415–424; Phys. Rev. B. 38, 1581 (1988); inGoogle Scholar
Defects in Semiconductors, ed. by Ferenczi, G. (Mat. Sci. Forum., 38–41, 1989) pp. 961–965.Google Scholar
8. Holm, B., Nielsen, K. B. and Nielsen, B. B., presented as OLN at the 6th Trieste ICTP-IUPAP Semicond. Simp., 1990.Google Scholar
9. Endrös, A.. Phys. Rev. Lett. 63, 70 (1989).Google Scholar
10. Borenstein, J. T., Anqell, D. and Corbett, J. W. in Characterization of the Structure and Chemistry of Materials, ed. by Larson, B. C., Rulle, M. and Seidman, D. N. (MRS, Pittsburg, 1989) pp. 209–215.Google Scholar
11. Tokmoldin, S. Z. and Mukashev, B. N., J. Phys.: Condens. Matter 3, 9363 (1991).Google Scholar
12. Patterson, B. D., Rev. Mod. Phys., 60, 69 (1988).CrossRefGoogle Scholar
13. Johnson, N. M., Herrinq, C. and Chadi, D. J., Phys. Rev. Lett., 56, 769 (1986).Google Scholar
14. Pantelides, S. T., Appl. Phys. Lett., 50, 995 (1987).CrossRefGoogle Scholar
15. Herrero, C. P., Stutzmann, M., Breitschwerdt, A. and Santos, P. V., Phys. Rev. B, 41, 1054 (1990).CrossRefGoogle Scholar
16. Kreitzman, S. R., Pfiz, T., Sun-Mack, S., Riseman, T. M., Brewer, J. H., Williams, D. L. and Estle, T. L. in Muon Spin Rotation. Relaxation and Resonance, ed. by Cox, S. F. J., Eaton, G. H., Herlach, D. and Koptev, V. P. (Basel: SPC. 1990) pp. 561–566.Google Scholar
17. Bourqoin, J. C. and Corbett, J. W.. Phys. Lett., 38A, 135 (1972).Google Scholar
18. Pearton, S. J.. J. Electr. Mater., 14a, 737 (1985).Google Scholar
19. Chanq, K. J. and Chadi, D. J.. Phys. Rev. Lett., 60, 1422 (1988).Google Scholar
20. DeLeo, G. G. and Fowler, W. B.. Phys. Rev. B., 31, 6861 (1985).Google Scholar
21. Denteneer, P. J. H., Van de Walle, C. G. and Pantelides, S. T., Phys. Rev. B, 39, 10809 (1989).CrossRefGoogle Scholar
22. Nielsen, B. B., Andersen, J. V. and Pearton, S. J.. Phys. Rev. Lett. 60, 321 (1988).Google Scholar
23. Wiehert, T., Skudlik, H., Deicher, M., Grübel, G., Keller, R., Recknaqel, E. and Sonq, L., Phys. Rev. Lett. 59, 2087 (1987).Google Scholar
24. Baurichter, A., Deubler, S., Forkel, D., Uhrmacher, M., Wolf, H. and Witthuhn, W. in Shallow Impurities in Semiconductors, ed. by Monemar, B. (Inst. Phys. Conf. Ser. N 95, Bristol and Philadelphia. 1989) pp. 471–476.Google Scholar
25. Mukashev, B. N., Tamendarov, M. F. and Tokmoldin, S. Zh., in Defects in Semiconductors, ed. by Ferenczi, G. (Mat. Sci. Forum., 38–41, 1989) pp. 1039–1043.Google Scholar
26. Stavola, M., Pearton, S. J., Lopata, J. and Dautremont-Smith, W. C., Appl. Phys. Lett., 50, 1086 (1987).Google Scholar
27. Berqman, K., Stavola, M., Pearton, S. J. and Lopata, J., Phvs. Rev. B, 37, 2770 (1988).CrossRefGoogle Scholar
28. Denteneer, P. J. H., Van de Walle, C. G. and Pantelides, S. T.. Phys. Rev. B, 41, 3885 (1990).Google Scholar
29. Stein, H. J., J. Electr. Mater. 4, 157 (1975).Google Scholar
30. Mukashev, B. N., Tamendarov, M. F., Tokmoldin, S. Zh. and Frolov, V. V., Phys. Stat. Sol. (a) 91, 509 (1985).CrossRefGoogle Scholar
31. Mukashev, B. N., Tokmoldin, S. Zh. and Tamendarov, M. F. in Defect Control in Semiconductors, ed. by Sumino, K. (Elsevier Science Publishers, North-Holland. 1990) pp. 429–434.Google Scholar
32. Sinqh, V. A., Weiqel, C., Corbett, J. W. and Roth, L. M., Phys. Stat. Sol. (b) 81, 637 (1977).Google Scholar
33. Mukashev, B. N., Tokmoldin, S. Zh., Tamendarov, M. F. and Frolov, V. V., Physica B 170, 545 (1991).CrossRefGoogle Scholar
34. Pearton, S. J. and Haller, E. E., J. Appl. Phvs. 54, 3613 (1983).CrossRefGoogle Scholar
35. Pensi, G., Roos, G., Holm, C., Sirtl, E. and Johnson, N. M., Appl. Phys. Lett. 51, 451 (1987).Google Scholar
36. Koveshnikov, S. V., Yakimov, E. B., Yarykin, N. A. and Yunkin, V. A. in Defect Control in Semiconductors, ed. by Sumino, K. (Elsevier Science Publishers North-Holland, 1990) pp. 519–523.Google Scholar
37. Yapsir, A. S., Deak, P., Sinqh, R. K., Snyder, L. C., Corbett, J. W. and Lu, T. M., Phys. Rev. B. 38, 9936 (1988).CrossRefGoogle Scholar
38. vanOsten, A. B., Son, N. T., Vlasenko, L. S. and Ammerlaan, C. A. J. in Defects in Semiconductors, ed. by Ferenczi, G. (Mat. Sci. Forum 38–41, 1989) pp. 355–359.Google Scholar