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Hafnia surface and high-k gate stacks

Published online by Cambridge University Press:  31 January 2011

Xuhui Luo,
Alex Demkov,
Onise Sharia and
Gennadi Bersuker
Xuhui Luo
Affiliation:
luoxuhui@physics.utexas.eduxuhuiluo@gmail.com, UT Austin, Austin, Texas, United States
Alex Demkov
Affiliation:
Demkov@scholarone.com, UT Austin, Austin, Texas, United States
Onise Sharia
Affiliation:
osharia@umd.edu, UT Austin, Austin, Texas, United States
Gennadi Bersuker
Affiliation:
Gennadi.Bersuker@SEMATECH.Org, SEMATECH, Austin, Texas, United States
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Abstract

Hafnium dioxide that belongs to a class of metal oxides with a high dielectric constant or high-k dielectrics has been recently introduced as a gate dielectric in field effect transistors. We report a theoretical study of structural and electronic properties of hafnia surface, and the electronic structure and band alignment at hafnia interfaces with metals, oxides and semiconductors that are crucial in gate stack engineering.

Keywords

dielectricelectronic structuresimulation

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