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The Hall Carrier Mobility of AgBiTe2-Ag2Te Composite

Published online by Cambridge University Press:  21 March 2011

T. Sakakibara,
Y. Takigawa and
K. Kurosawa
T. Sakakibara
Affiliation:
Second Development Department, Aisin Seiki Co., Ltd., Kariya, 448-8650, JapanDepartment of Materials Science and Energy Engineering, University of Miyazaki, Miyazaki, 889-2192, Japan
Y. Takigawa
Affiliation:
Department of Electronic Engineering, Osaka Electro-Communication University, Neyagawa, 572-8530, Japan
K. Kurosawa
Affiliation:
Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki, 889-2192, Japan
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Abstract

We prepared a series of (AgBiTe2)1−x(Ag2Te)x (0≤×≤1) composite materials by melt and cool down [1]. The Hall coefficient and the electrical conductivity were measured by the standard van der Pauw technique over the temperature range from 93K to 283K from which the Hall carrier mobility was calculated. Ag2Te had the highest mobility while the mobility of AgBiTe2 was the lowest of all samples at 283K. However the mobility of the (AgBiTe2)0.125(Ag2Te)0.875 composite material was higher than the motility of Ag2Te below 243K. It seems that a small second phase dispersed in the matrix phase is effective against the increased mobility.

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References

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