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Halogen Based Surface Chemistries for Graphene Synthesis

Published online by Cambridge University Press:  01 February 2011

Srikanth Raghavan,
Timothy C. Nelson,
Tobias Denig and
C D Stinespring
Srikanth Raghavan
Affiliation:
sraghava@mix.wvu.edu, West Virginia University, Department of Physics, Morgantown, West Virginia, United States
Timothy C. Nelson
Affiliation:
tnelson8@mix.wvu.edu, West Virginia University, Department of Chemical Engineering, Morgantown, West Virginia, United States
Tobias Denig
Affiliation:
tdenig@mix.wvu.edu
C D Stinespring
Affiliation:
Charter.Stinespring@mail.wvu.edu, West Virginia University, Department of Chemical Engineering, Morgantown, West Virginia, United States
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Abstract

Halogen based (CF4 and Cl2) inductively coupled reactive ion etching (ICP-RIE) has been used to selectively etch silicon from 6H-SiC to produce a controlled number of carbon layers. After annealing at temperatures in the range of 550 °C to 1100 °C to reconstruct the near surface layers, x-ray photoelectron spectroscopy has been used to characterize the composition of the films. For the Cl2 based ICP-RIE, two carbon species are observed. One is due to carbon bound as SiC in the substrate and a second which can be attributed to graphene. In the case of CF4 based etching the situation is similar except the second peak is most closely aligned with p-type graphene. This is most likely due to electron transfer from the graphene to the trace levels of fluorine remaining on the surface after annealing.

Keywords

x-ray photoelectron spectroscopy (XPS)surface chemistryelectronic material

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1259: Symposium S – Graphene Materials and Devices , 2010, 1259-S17-02
Copyright
Copyright © Materials Research Society 2010

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