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Hardening by Point Defects and Solutes in B2 Intermetallics

Published online by Cambridge University Press:  11 February 2011

L. M. Pike,
Y. A. Chang,
C. T. Liu and
I. M. Anderson
L. M. Pike
Affiliation:
Engineering and Technology, Haynes International, Kokomo, IN
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, Univ. of Wisconsin, Madison, WI
C. T. Liu
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN
I. M. Anderson
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

This paper provides a review of recent progress on point defect and solute hardening in binary and ternary B2 intermetallics. As is the case for disordered metallic solutions, the presence of point defects and solute atoms in ordered intermetallic compounds results in solid solution hardening (SSH). However, factors unique to ordered systems are often responsible for unusual hardening effects. Binary compounds with identical crystal structures can exhibit significantly different hardness behavior. Ternary solute additions to ordered compounds can give rise to apparent solid solution softening as well as unexpectedly rapid hardening. These effects arise from the interaction of multiple defect types as well as the presence of multiple sublattice sites available for solute occupation. Therefore, before the SSH behavior of ordered intermetallics can be properly studied, it is necessary to develop an understanding of the types and quantities of the point defects which are present. Three recent studies by the authors are reviewed. Much of the work was done on NiAl and FeAl in binary form as well as with ternary additions. Defect concentrations over wide ranges in alloy composition and quenching temperature were determined using the ALCHEMI (atom location by channeling enhanced microanalysis) technique combined with vacancy measurements. Hardness values were also measured. It was found that most of the observed SSH effects could be rationalized on the basis of the measured point defect concentrations.

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