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Heavy Metal Gettering in Implanted Buried-Oxide Structures

Published online by Cambridge University Press:  28 February 2011

T. I. Kamins and
S. Y. Chiang
T. I. Kamins
Affiliation:
Hewlett-Packard Laboratories, Palo Alto CA 94304
S. Y. Chiang
Affiliation:
Hewlett-Packard Laboratories, Palo Alto CA 94304
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Abstract

To investigate gettering of heavy metal impurities to the damaged regions surrounding an implanted buried oxide, the behavior of chrominum and copper on annealing has been investigated. Cr tends to segregate to the surface Si-SiO2 interface, although a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985, 239
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Das, K, Shorthouse, G P, and Butcher, J B, Electron. Lett. 19, 139 (1983).Google Scholar
2.Skorupa, W, Kreissig, U, and Hensel, E, Electron. Lett. 20, 426 (1984).Google Scholar
3.Pinizzotto, R F, Vaandrager, B L, Matteson, S, Lam, H W, and Malhi, S D S, IEEE Trans. Nuclear Science NS–30, 1718 (1983).Google Scholar
4.Tuppen, C G, Taylor, N R, Hemment, P L F, and Arrowsmith, R P, Appl. Phys. Lett. 45, 57 (1984).Google Scholar
5.The buried oxide layers were implanted by Kroko, L., Tustin, CA.Google Scholar
6.The SIMS analysis was performed at Charles Evans and Associates, San Mateo, CA.Google Scholar
7.Shimura, F and Huff, H R, “VLSI Silicon Material Criteria,” to appear in VLSI Handbook (ed. Einspruch, N G, Academic Press)].Google Scholar
8.Suga, H., Shimanuki, Y., Murai, K., and Endo, K, Semiconductor Processing, ASM STP 850 (ed. Gupta, D C, ASTM, 1984), p. 241.Google Scholar
9.Ohsawa, A., Honda, K, and Toyokura, N, J. Electrochem. Soc. 131, 2964 (1984).Google Scholar
10.Sadana, D K, Amer. Vac. Soc. Symposium, “Trace Impurities in Silicon,” San Jose CA, June 13, 1985.Google Scholar