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High Efficiency Amorphous Silicon Based Solar Cells: A Review

Published online by Cambridge University Press:  26 February 2011

Rajeewa R. Arya
Rajeewa R. Arya*
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
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Abstract

Over the past twelve years large strides have been made in improving the conversion efficiency of amorphous silicon based solar cells from 2.4% to 13%. The history and status of the material and device developments that have led to this five-fold improvement in the conversion efficiency are reviewed. Prospects for future improvements are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988, 569
Copyright
Copyright © Materials Research Society 1988

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References

1. Chittick, R.C., Alexander, J.H. et al., J. Electrochem. Soc. 116, 77 (1969).CrossRefGoogle Scholar
2. Triska, A., Dennison, D. et al., Bull. Am. Phys. Soc. 20, 392 (1975).Google Scholar
3. Pankove, J.I. and Carlson, D.E., Appl. Phys. Lett. 31, 450 (1977).CrossRefGoogle Scholar
4. Brodsky, M.H., Frisch, M.A. et al., Appl. Phys. Lett. 30, 561 (1977).Google Scholar
5. Ching, W.Y., Lam, D.J. et al., Phys. Rev. Lett. 42, 805 (1979).Google Scholar
6. Fritzsche, H., Tsai, C.C. et al., Solid State Tech. 21, 55 (1978).Google Scholar
7. Spear, W.E. and LeComber, P.G., Solid State Commun. 17, 1193 (1975).Google Scholar
8. Carlson, D.E. and Wronski, C.R., Appl. Phys. Lett. 28, 671 (1976).Google Scholar
9. Carlson, D.E., IEEE Trans. Electron. Dev. ED-24, 449 (1977).Google Scholar
10. Carlson, D.E., 14th IEEE PVSC, p. 291 (1980).Google Scholar
11. Arya, R.R., Catalano, A. et al., Proc. 18th IEEE PVSC, p. 1710 (1985).Google Scholar
12. Arya, R.R., Catalano, A. et al., Proc. Mat. Res. Sym. Vo.. 70, 517 (1986).Google Scholar
13. Tsuda, S., Nakano, S. et al., Proc. 18th IEEE PVSC, p. 1295 (1985).Google Scholar
14. Lim, K.S., Konagai, M. et al., J. Appl. Phys. 56, 538 (1984).CrossRefGoogle Scholar
15. Arya, R.R., Catalano, A. et al., Appl. Phys. Lett. 49, 1087 (1986).Google Scholar
16. Arya, R.R., Bennett, M.S. et al., Tech. Dig. PVSEC-3, 457 (1987).Google Scholar
17. Haruki, H., Uchida, Y. et al., Jpn. J. Appl. Phys. 31, 283 (1982).Google Scholar
18. Guha, S., Yang, J. et al., Appl. Phys. Lett. 49, 218 (1986).CrossRefGoogle Scholar
19. Hattori, Y., Kruangam, D. et al., Proc. 19th IEEE PVSC, (1987).Google Scholar
20. Hamasaki, T., Kurata, H. et al., Appl. Phys. Lett. 37, 1084 (1984).CrossRefGoogle Scholar
21. Cody, G.D., Tiedje, T. et al., Phys. Rev. Lett. 47, 1480 (1981).Google Scholar
22. Yamasaki, S. and Mase, A., Electr. Dev. Lett 5, 315 (1984).Google Scholar
23. Carlson, D.E. et al., Tech. Report, SERI ZB-4-03056-3, p. 68 (1987).Google Scholar
24. Hack, M. and Shur, M., Appl. Phys. Lett. 49, 1432 (1986).Google Scholar
25. Tawada, Y., Kondo, M. et al., Proc. 15th IEEE PVSC, P. 245 (1981).Google Scholar
26. Catalano, A., D'Aiello, R.V. et al., Proc. 16th IEEE PVSC, P2Ad3 (1982).Google Scholar
27. Yang, J., Proc. a-Si:H Sub-Cont. Review Mtg., Palo Alto, CA (1987).Google Scholar
28. Hattori, Y., Kruangam, D. et al., Tech. Dig. PVSEC-3, p. 171 (1987).Google Scholar
29. Nakamura, N. et al. Optical Effects in a-Semi, AIP Conf Proc 120 303 (1984).Google Scholar
30. Nakano, S. et al., Appl. Phys. A 41, 267 (1986)Google Scholar
31. Catalano, A., Arya, R.R. et al., Proc. 19th IEEE PVSC, p. 1506 (1987).Google Scholar
32. Kim, W.Y. et al., Tech. Dig. PVSEC-3, p. 175 (1987).Google Scholar
33. Yablonovitch, E. and Cody, G., IEEE Trans. Elect. Dev. ED-29, 300 (1982).Google Scholar
34. Deckman, H.W. et al., Proc 17th IEEE PVSC, p. 955 (1984).Google Scholar
35. Deckman, H.W. et al., J. Vac. Sci. Technol., A1(2), 578 (1983).Google Scholar
36. Arya, R.R., Proc. Workshop on Phy. & Appl. of a-Semi., Torino, Italy (1987).Google Scholar
37. Madan, A. et al., Appl. Phys. Lett. 37, 826 (1980).CrossRefGoogle Scholar
38. Tsuda, S., Takahama, T. et al., Proc. 18th IEEE PVSC, p. 1295 (1985).Google Scholar
39. Tanner, D.P. et al., Proc. 18th IEEE PVSC, p. 1301 (1985).Google Scholar
40. Hack, M. and Shur, M., Proc. 18th IEEE PVSC, p. 1588 (1985).Google Scholar
41. Catalano, A., Bennett, M. et al., Proc. 18th IEEE PVSC, p. 1378 (1985).Google Scholar
42. Newton, J., Wood, G. et al. Proc. 19th IEEE PVSC p. 862 (1987) & ref therein.Google Scholar
43. Mackenzie, K.D. et al., Phys. Rev. B. 31, 2198 (1985).Google Scholar
44. Stutzman, M. et al., Phys. Rev. B 30, 3595 (1984).Google Scholar
45. Gocsen, N.A. and Loferski, J.J., Solar Energy Mat. 1, 279 (1979).Google Scholar
46. Hanak, J.J., Solar Energy, 23, 145 (1979).Google Scholar
47. Dalal, V.L. and Fagen, E.A., Proc. 14th IEEE PVSC, 1066 (1980).Google Scholar
48. Marfaing, Y., Proc. 2nd E.C. Photovoltaic Solar Energ. Conf. p. 287 (1979).Google Scholar
50. Hamakawa, Y. et al., Appl. Phys. Lett., 35, 187 (1979).Google Scholar
51. Hanak, J.J., 8th Int'l Conf on Amorphous & Liquid Semi. Harvard Univ (1979).Google Scholar
52. Nakamura, G. et al., Proc. 16th IEEE PVSC, p. 1331 (1982).Google Scholar
53. Catalano, A. et al., Tech. Dig. PVSEC-3, p. 705 (1987).Google Scholar
54. Ishihara, T. et al., Proc. 19th IEEE PVSC 1OP-3 (1987).Google Scholar
55. Arya, R.R. et al., Tech. Dig. PVSEC-3, p. 725 (1987).Google Scholar
56. Yang, J., Ross, R. et al., Proc. 18th IEEE PVSC, p. 1519 (1985).Google Scholar
57. Yang, J., Gladfelter, T. et al., Tech. Dig. PVSEC-2, p. 361 (1986).Google Scholar