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High Power Laser Effects on Unimplanted and Implanted Aluminium Single Crystals

Published online by Cambridge University Press:  15 February 2011

G. Battaglin,
A. Carnera,
G. Della Mea,
P. Mazzoldi,
A.K. Jain,
V.N. Kulkarni and
D.K. Sood
G. Battaglin
Affiliation:
Unità GNSM-CNR, Institute of Physics, Università di Padova, Italy
A. Carnera
Affiliation:
Unità GNSM-CNR, Institute of Physics, Università di Padova, Italy
G. Della Mea
Affiliation:
Unità GNSM-CNR, Institute of Physics, Università di Padova, Italy
P. Mazzoldi
Affiliation:
Unità GNSM-CNR, Institute of Physics, Università di Padova, Italy
A.K. Jain
Affiliation:
Unità GNSM-CNR, Institute of Physics, Università di Padova, Italy
V.N. Kulkarni
Affiliation:
Nuclear Physics Division, Bhabha Atomic Research Centre, Bombay–4000 85, INDIA
D.K. Sood
Affiliation:
Nuclear Physics Division, Bhabha Atomic Research Centre, Bombay–4000 85, INDIA
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Mechanisms involved in laser processing of ion implanted semiconductors have been extensively investigated (1,2). Relatively little work has been done on implanted metals (3,10). The liquid solid interface (melt front) velocity in metals (11,12) is much larger than that in Si. Therefore several nonequilibrium effects on recrystallization (6) solute segregation (9) and metastable phase formation (4,6,7) are observed. Such effects would depend on the melt front velocity, equilibrium phase diagram considerations (such as equilibrium segregation coefficient Ko, miscibility in licuid phase, intermediate phases etc.) and also on the as implanted nonequilibrium phase and defect structure. In this paper we present a study of the influence of some of these parameters during laser treatment of sincle crystals of virgin Al and dilute implanted alloys of Mo and Cd in Al.

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References

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