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High Sensitivity Auger Spectroscopy

Published online by Cambridge University Press:  25 February 2011

L. A. Larson
L. A. Larson*
Affiliation:
National Semiconductor Corp., 2900 Semiconductor Drive, P.O. Box 58090, Santa Clara, CA 95052-8090
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Abstract

The technique of Auger Electron Spectroscopy has been investigated for the purposes of detecting contamination levels in high dose ion implants. Historically, Auger sensitivities have been considered to be on the order of 1%. This is due to the rather large secondary electron background and the various combinations of electron beam and detector noise that may occur. In this study, it is shown that the use of background subtraction and integration of the resulting EN(E) Auger peak will result in considerably better sensitivities for the case of ion implants in silicon.

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986, 129
Copyright
Copyright © Materials Research Society 1986

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References

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