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High Temperature Rectifying Contacts on Semiconducting Diamond Using Doped Silicon

Published online by Cambridge University Press:  25 February 2011

V. Venkatesan,
D.G. Thompson and
K. Das
V. Venkatesan
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, P. 0. Box 13608, Research Triangle Park, N. C. 27709
D.G. Thompson
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, P. 0. Box 13608, Research Triangle Park, N. C. 27709
K. Das
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, P. 0. Box 13608, Research Triangle Park, N. C. 27709
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Abstract

High temperature rectifying contacts have been fabricated on naturally occurring lib semiconducting diamond crystals using highly doped Si. Polycrystalline Si deposited by low pressure chemical vapor deposition (LPCVD) and amorphous Si deposited by sputtering were investigated. Following LPCVD deposition, the polycrystalline Si filn was doped with P by solid state diffusion at a temperature of 900°C using a POCI3 source. Boron doped and As doped Si films were deposited by sputtering from highly doped Si targets. Current-voltage measurements were performed on the fabricated P doped, B doped and As doped Si contacts from room temperature up to ∼400∼C. In all cases, the contacts yielded excellent rectification in the temperature range investigated. Current conduction in doped Si/diamond systems appears to be space charge limited. The position and concentration of deep levels in a natural lib diamond crystal have been determined from an analysis of space charge limited current-voltage (I-V) characteristics.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992, 419
Copyright
Copyright © Materials Research Society 1992

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