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High Throughput Electrochemical Method for Contact Optimization in Printed Rectifying Diodes

Published online by Cambridge University Press:  24 April 2014

Petri S. Heljo,
Himadri S. Majumdar and
Donald Lupo
Petri S. Heljo
Affiliation:
Tampere University of Technology, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, P.O. Box 692, 33101 Tampere, Finland
Himadri S. Majumdar
Affiliation:
VTT Technical Research Centre of Finland, Tietotie 3, 02150 Espoo, Finland
Donald Lupo
Affiliation:
Tampere University of Technology, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, P.O. Box 692, 33101 Tampere, Finland
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Abstract

We report a low cost and high throughput electrochemical anodic oxidation method to enhance the metal-semiconductor contact between a silver electrode and an organic semiconductor in a rectifying diode application. The oxidized layer enhances the contact properties, leading to better device performance. Three different anodic oxide thicknesses were used in the study. Current-voltage and AC rectification measurements were used to characterize the printed devices. The DC output voltage of the half-wave rectifier increased consistently as a function of the oxide thickness. This procedure points toward a cost-effective way to optimize printed organic devices.

Keywords

devicesorganicoxide

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