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Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

Published online by Cambridge University Press:  01 February 2011

Mahdieh Mehran,
Zeinab Sanaee and
Shamsoddin Mohajerzadeh
Mahdieh Mehran
Affiliation:
m.mehran@ece.ut.ac.ir, University of Tehran, ECE, Tehran, Iran, Islamic Republic of
Zeinab Sanaee
Affiliation:
z.sanaee@ece.ut.ac.ir, University of Tehran, ECE, Tehran, Iran, Islamic Republic of
Shamsoddin Mohajerzadeh
Affiliation:
mohajer@ut.ac.irmohajerzadehh@yahoo.com, University of Tehran, ECE, Iran, Tehran, North Kargar Ave., Faculty of eng., Tehran, 1439957131, Iran, Islamic Republic of
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Abstract

We propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

Keywords

nanostructureporosityreactive ion etching

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