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Highly Textured Microcrystalline Si-Thin film Fabricated by Layer-by-Layer Technique

Published online by Cambridge University Press:  28 February 2011

Shun-Ichi Ishihara,
Deyan He,
Tetsuya Akasaka,
Yuzoh Arak,
Masami Nakata and
Isamu Shimizu
Shun-Ichi Ishihara
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city Japan 227
Deyan He
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city Japan 227
Tetsuya Akasaka
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city Japan 227
Yuzoh Arak
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city Japan 227
Masami Nakata
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city Japan 227
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city Japan 227
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Abstract

Microcrystalline silicon with high crystallinity was fabricated on a glass substrate at a rather low temperature (320 C) by alternately repeating the deposition of Si thin layer 10 nm thick from fluorinated precursors and the treatment with atomic hydrogen. Hydrogen content was reduced to 0.5 at% or less. According to the in situ ellipsometric observation, the sticking of precursors followed the reactions for the construction of the ordered structure with the aid of atomic hydrogen. In addition, the defects were passivated efficiently with the treatment down to 4×1016 spins/cm3. A marked improvement was simultaneously verified in the efficiency of the substitutional P-doping in the films fabricated by this layer-by-layer technique.

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References

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