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High-Performance SiGe MODFET Technology

Published online by Cambridge University Press:  17 March 2011

S. J. Koester,
J. O. Chu,
K. L. Saenger,
Q. C. Ouyang,
J.A. Ott,
D. F. Canaperi,
J. A. Tornello,
C.V. Jahnes and
S. E. Steen
S. J. Koester
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
J. O. Chu
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
K. L. Saenger
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
Q. C. Ouyang
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
J.A. Ott
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
D. F. Canaperi
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
J. A. Tornello
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
C.V. Jahnes
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
S. E. Steen
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
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Abstract

An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004, B7.2
Copyright
Copyright © Materials Research Society 2004

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References

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