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High-Resolution Transmission Electron Microscopy: An Essential Characterization Technique for Optimization of Semiconductor Epitaxy and Interfaces

Published online by Cambridge University Press:  21 February 2011

J. B. Posthill,
G. G. Fountain,
R. A. Rudder,
S. V. Hattangady,
G. S. Solomon,
M. L. Timmons and
R. J. Markunas
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
G. G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
R. A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
S. V. Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
G. S. Solomon
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
M. L. Timmons
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
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Abstract

High-resolution transmission electron microscopy has been utilized to critically assess semiconductor-based epitaxial films and interfaces. These results then provide a sound, scientific basis for subsequent process modification. Materials optimization is therefore achieved more efficiently.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989, 345
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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