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Hillock Formation and Reduction Using Metal Interlayers for Active Matrix Display Applications

Published online by Cambridge University Press:  10 February 2011

Sambit K. Saha,
Robert S. Howell and
Miltiadis K. Hatalis
Sambit K. Saha
Affiliation:
Display Research Laboratories Sherman Fairchild Center for Solid State Studies Dept of Electrical Engineering and Computer Science Lehigh University Bethlehem PA 18015
Robert S. Howell
Affiliation:
Display Research Laboratories Sherman Fairchild Center for Solid State Studies Dept of Electrical Engineering and Computer Science Lehigh University Bethlehem PA 18015
Miltiadis K. Hatalis
Affiliation:
Display Research Laboratories Sherman Fairchild Center for Solid State Studies Dept of Electrical Engineering and Computer Science Lehigh University Bethlehem PA 18015
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Abstract

The effects of using an extra layer of nickel, cobalt or titanium with Al-1%Cu films were examined with regard to hillock formation. The density and sizes of hillocks in these double layer metallization structures were characterized using scanning electron microscopy (SEM) and interfacial reactions between the transition metal layer and Al-l%Cu were examined using glancing angle x-ray diffraction (GA-XRD). Resistivities of the double layer films were characterized using conventional 4-point probe measurements. Hillock formation was totally suppressed when Ni and Co was used as the transition metal, while Ti did not eliminate hillocks. Hillock formation and resistivities are explained on the basis of interfacial reactions.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998, 333
Copyright
Copyright © Materials Research Society 1998

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