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Hot Electron Transistors Using Si/CoSi2

Published online by Cambridge University Press:  28 February 2011

A. F. J. Levi,
R. T. Tung,
J. L. Batstone and
M. Anzlowar
A. F. J. Levi
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. Anzlowar
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

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