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Hydrogen Bonding and Microvoid Stability in a-Si:H

Published online by Cambridge University Press:  16 February 2011

M. J. Van Den Boogaard,
A. C. Van Der Steege,
W. G. J. H. M. Van Sark and
W. F. Van Der Weg
M. J. Van Den Boogaard
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
A. C. Van Der Steege
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
W. G. J. H. M. Van Sark
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
W. F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
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Abstract

We have annealed PECVD a-Si:H films at 250, 300, and 350°C and measured the evolution of the infrared absorption spectrum. We observe that, during the initial stage of such a heat treatment, atomic hydrogen migrates from the isolated state to the clustered state. Thus diffusion of atomic hydrogen must occur around 300°C. Microvoids with internal surfaces covered with SiH bonds appear to be more stable than voids lined with SiH2 bonds and (SiH2)n polymers.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994, 299
Copyright
Copyright © Materials Research Society 1994

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